JPS6115978A - プラズマｃｖｄ装置 - Google Patents
プラズマｃｖｄ装置Info
- Publication number
- JPS6115978A JPS6115978A JP13833484A JP13833484A JPS6115978A JP S6115978 A JPS6115978 A JP S6115978A JP 13833484 A JP13833484 A JP 13833484A JP 13833484 A JP13833484 A JP 13833484A JP S6115978 A JPS6115978 A JP S6115978A
- Authority
- JP
- Japan
- Prior art keywords
- gas supply
- electrode
- gas
- film
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 14
- 238000007599 discharging Methods 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 abstract description 9
- 230000005856 abnormality Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 241000519995 Stachys sylvatica Species 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13833484A JPS6115978A (ja) | 1984-07-03 | 1984-07-03 | プラズマｃｖｄ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13833484A JPS6115978A (ja) | 1984-07-03 | 1984-07-03 | プラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6115978A true JPS6115978A (ja) | 1986-01-24 |
| JPH0565590B2 JPH0565590B2 (en]) | 1993-09-20 |
Family
ID=15219478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13833484A Granted JPS6115978A (ja) | 1984-07-03 | 1984-07-03 | プラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6115978A (en]) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121429A (ja) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置 |
| JPS61260623A (ja) * | 1985-05-14 | 1986-11-18 | Matsushita Electric Ind Co Ltd | プラズマ気相成長装置 |
| KR100476872B1 (ko) * | 1997-09-26 | 2005-07-05 | 삼성전자주식회사 | 반도체식각설비의상측전극판 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169116A (en) * | 1980-05-28 | 1981-12-25 | Sanyo Electric Co Ltd | Manufacture of amorphous silicon film |
-
1984
- 1984-07-03 JP JP13833484A patent/JPS6115978A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56169116A (en) * | 1980-05-28 | 1981-12-25 | Sanyo Electric Co Ltd | Manufacture of amorphous silicon film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61121429A (ja) * | 1984-11-19 | 1986-06-09 | Matsushita Electric Ind Co Ltd | プラズマｃｖｄ装置 |
| JPS61260623A (ja) * | 1985-05-14 | 1986-11-18 | Matsushita Electric Ind Co Ltd | プラズマ気相成長装置 |
| KR100476872B1 (ko) * | 1997-09-26 | 2005-07-05 | 삼성전자주식회사 | 반도체식각설비의상측전극판 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0565590B2 (en]) | 1993-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |